What this 60 V, 120 A N-channel MOSFET brings to the board
The IPB029N06N3GATMA1 OptiMOS N-channel MOSFET has a maximum Rds(on) of 2.9 mOhm at Vgs=10 V and 100 A.
The gate charge is 165 nC at 10 V. The input capacitance is 13000 pF at 30 V Vds.
IPB029N06N3GATMA1 N-Channel MOSFET, 60V, 120A, 2.9mOhm
MPNIPB029N06N3GATMA1
End of Life
Infineon OptiMOS N-Channel MOSFET, 60V Vdss, 120A Id, 2.9mOhm Rds(on) @ 100A/10V, 165nC Qg, PG-TO263-3 (D2PAK), -55°C to 175°C.
$2.13Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 188W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 118µA |
| Rds on (Max) @ id, vgs | 2.9mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 165 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 13000 pF @ 30 V |
Product details
Frequently asked questions
What is the Rds(on) of IPB029N06N3GATMA1?
The maximum Rds(on) is 2.9 mOhm at a drain current of 100 A and a gate-source voltage of 10 V. That is the conduction loss figure to use in your thermal calculation at 25°C junction.
What is the gate charge (Qg) of IPB029N06N3GATMA1?
The maximum total gate charge is 165 nC at Vgs=10 V. This determines the average gate-drive current needed at your switching frequency — for example, at 100 kHz the driver must supply about 16.5 mA average.
Is IPB029N06N3GATMA1 RoHS compliant?
Yes, it is ROHS3 compliant, meaning it meets the latest RoHS directive without any exempted substances.