Infineon OptiMOS N-Channel MOSFET, 60V Vdss, 120A Id, 2.9mOhm Rds(on) @ 100A/10V, 165nC Qg, PG-TO263-3 (D2PAK), -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 188W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 118µA |
| Rds on (Max) @ id, vgs | 2.9mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 165 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 13000 pF @ 30 V |
The IPB029N06N3GATMA1 OptiMOS N-channel MOSFET has a maximum Rds(on) of 2.9 mOhm at Vgs=10 V and 100 A.
The gate charge is 165 nC at 10 V. The input capacitance is 13000 pF at 30 V Vds.
The junction temperature range is -55°C to 175°C. The gate threshold voltage is 4 V max at 118 µA.
The maximum Rds(on) is 2.9 mOhm at a drain current of 100 A and a gate-source voltage of 10 V. That is the conduction loss figure to use in your thermal calculation at 25°C junction.
The maximum total gate charge is 165 nC at Vgs=10 V. This determines the average gate-drive current needed at your switching frequency — for example, at 100 kHz the driver must supply about 16.5 mA average.
Yes, it is ROHS3 compliant, meaning it meets the latest RoHS directive without any exempted substances.