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Infineon Technologies IPB027N10N5ATMA1
Infineon Technologies

Infineon IPB027N10N5ATMA1 N-Channel MOSFET, 100 V, 120 A

MPNIPB027N10N5ATMA1
End of Life

Infineon OptiMOS™ IPB027N10N5ATMA1, N-Channel MOSFET, 100 V Vdss, 120 A Id, 2.7 mOhm Rds(on) at 10 V, 139 nC Qg, D2PAK-3 (PG-TO263-3), -55 to 175 °C.

$5.72Ref. price · indicative, final on quote
IPB027N10N5ATMA1 datasheet
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB027N10N5ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.8V @ 184µA
Rds on (Max) @ id, vgs2.7mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs139 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds10300 pF @ 50 V

Product details

100 V, 2.7 mOhm — the conduction-loss floor for high-current rails

The Infineon IPB027N10N5ATMA1 is an N-channel MOSFET from the OptiMOS™ family, built for low on-resistance at high current density. That is the conduction-loss floor for the design — at 50 A the dissipation is 6.75 W, which the D2PAK tab can sink with a reasonable copper area. The 139 nC total gate charge at 10 V tells the drive stage what it needs to deliver: at 100 kHz switching, the average gate current is 13.9 mA, well within a standard gate-driver IC's capability.

Frequently asked questions

What is the equivalent of IPB027N10N5ATMA1?

The CoolMOS™ IPD50R950CEAUMA1 is a different voltage class (500 V) and Rds(on) tier (950 mOhm) — it is not a functional substitute for a 100 V, 2.7 mOhm rail.

Is IPB027N10N5ATMA1 RoHS compliant?

Yes, it is listed as ROHS3 compliant.