IPB027N10N3GATMA1 - Infineon Technologies
MPNIPB027N10N3GATMA1
End of Life
MOSFET N-CH 100V 120A D2PAK
$6.51Ref. price · indicative, final on quote
PackagingTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.5V @ 275µA |
| Rds on (Max) @ id, vgs | 2.7mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 206 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 14800 pF @ 50 V |