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Infineon Technologies IPB026N06NATMA1

IPB026N06NATMA1 Infineon OptiMOS N-Ch 60 V MOSFET, 2.6 mOhm

MPNIPB026N06NATMA1
End of Life

Infineon OptiMOS™ IPB026N06NATMA1, N-Channel MOSFET, 60 V Vdss, 100 A continuous drain (Tc), 2.6 mOhm max Rds(on) at 10 V, 56 nC gate charge, PG-TO263-3 (D²Pak) package, -55°C to 175°C junction temperature.

$2.37Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB026N06NATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C25A (Ta), 100A (Tc)
Power dissipation3W (Ta), 136W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.8V @ 75µA
Rds on (Max) @ id, vgs2.6mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4100 pF @ 30 V

Product details

60 V, 2.6 mOhm — the conduction-loss ceiling

The IPB026N06NATMA1 is an Infineon OptiMOS™ N-channel power MOSFET rated for 60 V drain-source and 100 A continuous drain current at the case temperature.

Total gate charge is 56 nC at 10 V. Input capacitance Ciss is 4100 pF at 30 V drain-source.

175 °C junction — where it lives

That 175°C ceiling suits under-hood automotive power stages or high-ambient industrial supplies where the die sees sustained thermal cycling. Power dissipation is rated 136 W at the case and 3 W in still air at the ambient.

Lifecycle and compliance posture

ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IPB026N06NATMA1?

That is the conduction-loss floor for a 60 V, 100 A-rated switch.

Is IPB026N06NATMA1 RoHS compliant?

Yes, the part is listed as ROHS3 Compliant.