60 V, 2.6 mOhm — the conduction-loss ceiling
The IPB026N06NATMA1 is an Infineon OptiMOS™ N-channel power MOSFET rated for 60 V drain-source and 100 A continuous drain current at the case temperature.
Total gate charge is 56 nC at 10 V. Input capacitance Ciss is 4100 pF at 30 V drain-source.
175 °C junction — where it lives
That 175°C ceiling suits under-hood automotive power stages or high-ambient industrial supplies where the die sees sustained thermal cycling. Power dissipation is rated 136 W at the case and 3 W in still air at the ambient.
Lifecycle and compliance posture
ROHS3 compliant.
