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Infineon Technologies IPB024N08N5ATMA1

Infineon IPB024N08N5ATMA1 OptiMOS™ N-Channel MOSFET

MPNIPB024N08N5ATMA1
End of Life

Infineon OptiMOS™ IPB024N08N5ATMA1, N-Channel MOSFET, 80 V Vdss, 120 A Id, 2.4 mOhm Rds(on) at 10 V, PG-TO263-3 (D²Pak), -55°C to 175°C.

$4.92Ref. price · indicative, final on quote
Infineon Technologies IPB024N08N5ATMA1 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB024N08N5ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation214W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.8V @ 154µA
Rds on (Max) @ id, vgs2.4mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs123 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8970 pF @ 40 V

Product details

The Infineon IPB024N08N5ATMA1 is an 80 V, 120 A N-channel MOSFET from the OptiMOS™ family, housed in a PG-TO263-3 (D²Pak) surface-mount package. It is built for high-current switching applications — motor drives, DC-DC converters, battery management, and power supplies — where low conduction loss and fast switching matter. The 2.4 mOhm maximum on-resistance at 100 A, 10 V keeps I²R losses low in a 120 A continuous-drain design, while the 123 nC gate charge at 10 V gives the gate-drive circuit a clear number to size against. Junction temperature is rated to 175 °C, which buys headroom in a confined enclosure or under-hood environment.

The 2.4 mOhm Rds(on) at 100 A, 10 V is the figure to use for conduction-loss calculations at full load. At lower gate drive (6 V minimum for rated Rds(on)), on-resistance rises.

Package and mounting — D²Pak on a copper pour

The PG-TO263-3 (D²Pak) is a surface-mount package with a large exposed drain tab.

Frequently asked questions

What is the Rds(on) and gate charge of IPB024N08N5ATMA1?

The maximum Rds(on) is 2.4 mOhm at 100 A drain current with a 10 V gate drive. The total gate charge (Qg) at 10 V is 123 nC.

Is IPB024N08N5ATMA1 suitable for high-current switching applications?

Yes. With an 80 V drain-source breakdown voltage, 120 A continuous drain current, and a 2.4 mOhm on-resistance, it is designed for high-current switching in motor drives, DC-DC converters, battery management, and power supplies.

Is IPB024N08N5ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.