80 V, 120 A N-channel — what it means for your switching design
The Infineon IPB024N08N5ATMA1 is an 80 V, 120 A N-channel MOSFET from the OptiMOS™ family, housed in a PG-TO263-3 (D²Pak) surface-mount package. It is built for high-current switching applications — motor drives, DC-DC converters, battery management, and power supplies — where low conduction loss and fast switching matter. The 2.4 mOhm maximum on-resistance at 100 A, 10 V keeps I²R losses low in a 120 A continuous-drain design, while the 123 nC gate charge at 10 V gives the gate-drive circuit a clear number to size against. Junction temperature is rated to 175 °C, which buys headroom in a confined enclosure or under-hood environment.
Rds(on) and gate charge — sizing the driver and estimating loss
The 2.4 mOhm Rds(on) at 100 A, 10 V is the figure to use for conduction-loss calculations at full load. At lower gate drive (6 V minimum for rated Rds(on)), on-resistance rises.
Package and mounting — D²Pak on a copper pour
The PG-TO263-3 (D²Pak) is a surface-mount package with a large exposed drain tab. The tab must be soldered to a copper pour on the PCB — the thermal resistance to case (junction-to-case) is what lets the part dissipate 214 W.
Lifecycle and compliance
The IPB024N08N5ATMA1 is listed as Active with ROHS3 compliance. No end-of-life notice or last-time-buy schedule is in effect.