Infineon OptiMOS series, N-Channel MOSFET, 100V Vdss, 120A Id, 2mOhm Rds(on) at 10V, 210nC Qg, TO-263-3 D2PAK, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 6V, 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 375W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 3.8V @ 270µA |
| Rds on (Max) @ id, vgs | 2mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 210 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 15600 pF @ 50 V |
The IPB020N10N5ATMA1: Total gate charge is 210 nC at 10 V. Input capacitance is 15600 pF at 50 V Vds.
Maximum power dissipation is 375 W at case temperature, but the real thermal limit depends on the heatsink and PCB copper area — the D2PAK (TO-263-3) package's exposed tab must be soldered to a sufficient copper pour to keep junction temperature below 175°C at full load.
The maximum Rds(on) is 2 mOhm at 100 A drain current with 10 V gate drive. This is the value to use for worst-case conduction loss calculations at 25°C junction; the datasheet's normalized curve shows Rds(on) increases with temperature.