IPB020N08N5ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS series, IPB020N08N5ATMA1, N-Channel MOSFET, 80V Vdss, 120A Id, 2mOhm Rds(on) at 10V, 166nC Qg, -55°C to 175°C, PG-TO263-3.

Infineon Technologies IPB020N08N5ATMA1
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[IN STOCK] In Stock: 75 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPB020N08N5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.8V @ 208µA
Rds on (Max) @ id, vgs2mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs166 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12100 pF @ 40 V

Technical details

IPB020N08N5ATMA1
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