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Infineon Technologies IPB019N06L3GATMA1

Infineon IPB019N06L3GATMA1 N-Channel MOSFET, 60 V, 120 A

MPNIPB019N06L3GATMA1
End of Life

Infineon OptiMOS™ IPB019N06L3GATMA1, N-Channel MOSFET, 60 V Vdss, 120 A Id, 1.9 mOhm Rds(on) @ 10 V, 250 W, D²Pak (TO-263), -55 to 175 °C.

$3.29Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPB019N06L3GATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id2.2V @ 196µA
Rds on (Max) @ id, vgs1.9mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs166 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds28000 pF @ 30 V

Product details

Gate charge and switching — what the 166 nC Qg means for the driver budget

Total gate charge is 166 nC at 4.5 V, with the drive voltage window specified from 4.5 V to 10 V for minimum and maximum Rds(on). At a 100 kHz switching frequency, the average gate-drive current required is 166 nC × 100 kHz = 16.6 mA; at 500 kHz it rises to 83 mA. The driver must also supply the peak current to charge the 28 000 pF input capacitance (Ciss) at 30 V Vds during the Miller plateau — a weak on-chip driver from a 3.3 V MCU will not cleanly saturate the gate, so budget a dedicated gate-driver IC rated for at least 2 A peak sink/source.

175 °C junction — the thermal budget for the D²Pak copper island

The 250 W power dissipation at case temperature assumes the tab is soldered to a 1 oz copper pad of at least 6 cm² on a 2-layer board; with a 22.8 W conduction loss at 120 A and a typical RthJC of 0.4 °C/W, the junction rises about 9 °C above the case. The margin to the 175 °C limit is the headroom for switching losses and ambient temperature.

Frequently asked questions

Is IPB019N06L3GATMA1 RoHS compliant?

Yes, the part is ROHS3 compliant per the Infineon lifecycle record.