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Infineon Technologies IPB017N08N5ATMA1

Infineon IPB017N08N5ATMA1 OptiMOS N-Ch MOSFET, 80 V

MPNIPB017N08N5ATMA1
End of Life

Infineon OptiMOS N-Channel MOSFET, IPB017N08N5ATMA1, 80 V Vdss, 120 A Id, 1.7 mOhm Rds(on) at 10 V, 223 nC Qg, PG-TO263-3 (D2PAK), -55 to 175 °C.

$6.2Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPB017N08N5ATMA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C120A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3.8V @ 280µA
Rds on (Max) @ id, vgs1.7mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs223 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds16900 pF @ 40 V

Product details

80 V, 1.7 mOhm — the conduction-loss floor for high-current switching

Total gate charge is 223 nC at 10 V. Input capacitance is 16900 pF at 40 V drain-source. The gate threshold is specified at 3.8 V maximum with 280 µA drain current, and the recommended drive voltage range is 6 V to 10 V for minimum Rds(on).

ROHS3 compliant.

Package and thermal — the D2PAK tab is the heatsink

The supplier device package is PG-TO263-3. The 375 W dissipation at case temperature is a theoretical ceiling; real-world dissipation is limited by the PCB's ability to sink heat from the tab into the inner copper planes.

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