At elevated junction temperature the on-resistance increases by roughly 50 % at 125 °C — a 120 A load then sees about 2.25 mOhm effective, still low enough to keep I²R conduction loss under 35 W. Gate charge is 250 nC at 10 V, which demands a gate driver capable of sourcing several amperes peak to hit the target switching speed; a 2 A driver with 10 Ω external gate resistor gives a typical turn-on time around 50 ns.
Package and thermal path
Housed in a PG-TO263-3 (D²Pak) surface-mount package with two leads plus a large tab for heatsinking. The 250 W power dissipation rating at case temperature assumes the tab is soldered to a substantial copper area on the PCB — a 1 oz copper pad of at least 6 cm² keeps the junction below 175 °C at full rated current.
Lifecycle status is Active with ROHS3 compliance. The OptiMOS™ series is Infineon's mainstream low-voltage trench MOSFET portfolio, so supply continuity is stable across package variants.