Infineon OptiMOS™ N-Channel MOSFET, IPB011N04LGATMA1, 40 V Vdss, 180 A continuous drain at 25°C, 1.1 mOhm Rds(on) max at 100 A, 10 V gate drive, 346 nC gate charge, -55°C to 175°C junction, PG-TO263-7-3 package.
| Parameter | Value |
|---|---|
| Series | OptiMOS™ |
| FET type | N-Channel |
| Mounting type | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 250W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Vgs(th) (Max) @ id | 2V @ 200µA |
| Rds on (Max) @ id, vgs | 1.1mOhm @ 100A, 10V |
| Gate charge (Qg) (Max) @ vgs | 346 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 29000 pF @ 20 V |
The IPB011N04LGATMA1: The 250 W dissipation ceiling at Tc=25 °C is a package-limit number; real-world dissipation is lower once the junction-to-ambient thermal path is accounted for in the target enclosure.
Total gate charge is 346 nC at 10 V.
The 2 V maximum gate threshold at 200 µA drain current means the device is fully enhanced with a standard 10 V gate drive.
No. The IPD50R950CEAUMA1 is a 500 V CoolMOS device with 950 mOhm Rds(on) — a different voltage class and on-resistance tier. The 40 V IPB011N04LGATMA1 is not a functional replacement for a 500 V bus design.