1 mOhm Rds(on) in a TO-263-7 — the high-current switch
The Infineon IPB010N06NATMA1 is an N-channel MOSFET from the OptiMOS™ series, built for low-loss switching at high current. The 60 V drain-source voltage rating covers 48 V bus architectures with margin for transients.
180 A continuous — the thermal path is the constraint
The device is rated for 180 A continuous drain current when the case temperature is held at 25 °C, and 45 A at 25 °C ambient. The 300 W power dissipation capability at the case tells the layout engineer that the exposed pad on the PG-TO263-7 package must be soldered to a substantial copper area on the PCB — the package itself can handle the heat, but only if the board pulls it away.
Gate charge and drive voltage
Total gate charge is 208 nC at 10 V drive. This is a heavy gate — a driver sourcing 2 A peak can charge it in about 100 ns, but the switching loss at high frequency adds up. The drive voltage window is 6 V to 10 V for achieving the rated Rds(on); below 6 V the on-resistance rises sharply. Input capacitance is 15000 pF at 30 V drain-source, which sets the gate drive impedance requirement for clean switching edges.
Lifecycle and compliance
It is ROHS3 compliant. No successor or second-source alternate is recorded in the available documentation. The -55°C to 175°C junction temperature range suits applications that see sustained thermal cycling — engine bay electronics, industrial motor drives, and power converters in sealed enclosures.