1 mOhm Rds(on) in a TO-263-7 — the high-current switch
The Infineon IPB010N06NATMA1 is an N-channel MOSFET from the OptiMOS™ series, built for low-loss switching at high current. The 60 V drain-source voltage rating covers 48 V bus architectures with margin for transients.
180 A continuous — the thermal path is the constraint
The device is rated for 180 A continuous drain current when the case temperature is held at 25 °C, and 45 A at 25 °C ambient.
Gate charge and drive voltage
Total gate charge is 208 nC at 10 V drive. This is a heavy gate — a driver sourcing 2 A peak can charge it in about 100 ns, but the switching loss at high frequency adds up. The drive voltage window is 6 V to 10 V for achieving the rated Rds(on); below 6 V the on-resistance rises sharply. Input capacitance is 15000 pF at 30 V drain-source, which sets the gate drive impedance requirement for clean switching edges.
It is ROHS3 compliant. No successor or second-source alternate is recorded in the available documentation.