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Infineon Technologies IPAW60R600P7SE8228XKSA1 — Discrete Semiconductors

Infineon Technologies IPAW60R600P7SE8228XKSA1

MPNIPAW60R600P7SE8228XKSA1
Active
$0.5440Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPAW60R600P7SE8228XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation21W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 80µA
Rds on (Max) @ id, vgs600mOhm @ 1.7A, 10V
Gate charge (Qg) (Max) @ vgs9 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds363 pF @ 400 V