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Infineon Technologies IPAW60R180P7SXKSA1 — Discrete Semiconductors
Infineon Technologies

IPAW60R180P7SXKSA1 CoolMOS P7 N-Ch 650V 18A MOSFET, NRND

MPNIPAW60R180P7SXKSA1
NRND

Infineon CoolMOS™ P7 series, IPAW60R180P7SXKSA1, N-Channel MOSFET, 650V Vdss, 18A Id, 180mOhm Rds(on) at 10V, TO-220-3 Full Pack, -55°C to 150°C.

$1.7600Ref. price · indicative, final on quote
IPAW60R180P7SXKSA1 datasheet
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPAW60R180P7SXKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation26W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 280µA
Rds on (Max) @ id, vgs180mOhm @ 5.6A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1081 pF @ 400 V

Product details

650 V, 18 A, 180 mOhm — what the CoolMOS P7 delivers

The IPAW60R180P7SXKSA1: The 180 mOhm maximum on-resistance is specified at a 10 V gate drive with 5.6 A Id.

NRND — plan the last buy now

Infineon is not actively promoting it for new projects.

Gate charge and input capacitance — sizing the driver

The 25 nC total gate charge at 10 V is moderate for this voltage and current class.

Full military temperature range — where it fits

The TO-220 Full Pack isolates the tab electrically — no insulating pad needed.

Frequently asked questions

Is IPAW60R180P7SXKSA1 obsolete?

Plan for a last-time-buy or identify a current-series replacement before the EOL notice arrives.

What is the replacement for IPAW60R180P7SXKSA1?

No official successor is listed on the record. The current CoolMOS P7 and CFD7 families offer parts with similar voltage and Rds(on) ratings in the same TO-220 Full Pack package — cross-reference the gate charge and capacitance specs against your switching frequency to pick the closest drop-in.

What is the Rds(on) of IPAW60R180P7SXKSA1?

180 mOhm maximum at Vgs = 10 V and Id = 5.6 A. This is the on-resistance at the typical operating point for a 650 V FET in a 300–500 W power stage.