The Infineon IPAN80R280P7XKSA1 is an 800 V N-channel MOSFET from the CoolMOS P7 series, built for high-voltage power conversion. The PG-TO220-3-FP full-pack package has an isolated tab, so the heatsink does not need an insulating pad or mica washer, which simplifies assembly and cuts a line item from the BOM.
280 mOhm Rds(on) and 36 nC gate charge — the switching-loss tradeoff
For a 10 V gate drive design, the FET is fully enhanced across the load range.
PG-TO220-3-FP full-pack — mounting and thermal management
The PG-TO220-3-FP is a through-hole full-pack variant of the standard TO-220. The plastic body fully encapsulates the backside tab, so the tab is electrically isolated from the drain. The maximum power dissipation is 30 W at the case, and the junction-to-case thermal path is the limiting factor; a good thermal interface to a heatsink is still required above a few watts of continuous dissipation.
The base product number is IPAN80, which covers the P7 series variants in this voltage and package family.
