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Infineon Technologies IPAN70R450P7SXKSA1 — Discrete Semiconductors

Infineon IPAN70R450P7SXKSA1 CoolMOS P7 N-Channel MOSFET

MPNIPAN70R450P7SXKSA1
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Infineon CoolMOS™ P7 series, N-Channel MOSFET, 700 V drain-source, 450 mOhm Rds(on) at 10 V, 10 A continuous drain, TO-220-3 Full Pack, through-hole, -40°C to 150°C junction temperature.

$0.6084Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPAN70R450P7SXKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation22.7W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 120µA
Rds on (Max) @ id, vgs450mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs13.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds424 pF @ 400 V

Product details

The IPAN70R450P7SXKSA1: Housed in a TO-220-3 Full Pack (PG-TO220-FP) — a fully isolated through-hole package. The 10 A continuous drain current and 22.7 W power dissipation suit it for medium-power offline switching applications where the 700 V blocking voltage provides margin for universal AC input rectified rails.

Gate charge and switching — what the 13.1 nC figure tells you

It means the gate driver does not need to supply a large current pulse to switch the device — a standard 1 A to 2 A gate driver IC can handle turn-on and turn-off transitions in the tens of nanoseconds. The 424 pF input capacitance at 400 V drain-source confirms the switching node capacitance is low enough for hard-switched topologies running at frequencies up to 100 kHz or so, though the full switching loss calculation depends on the specific operating point and gate drive strength. For high-frequency resonant converters, the low Qg helps keep circulating energy manageable.

Temperature range and thermal design

At 150°C junction, the Rds(on) will approximately double from the 25°C value, so conduction loss budgeting should use the hot resistance from the datasheet's typical curve.

Frequently asked questions

Can IPAN70R450P7SXKSA1 be used in high-frequency switching?

Yes, within limits. The 13.1 nC gate charge and 424 pF input capacitance at 400 V are moderate, making it suitable for hard-switched topologies up to around 100 kHz. For higher frequencies, a MOSFET with lower Qg and Ciss would be more efficient.