IPAN70R360P7SXKSA1

Infineon Technologies

Infineon CoolMOS™ P7 series, IPAN70R360P7SXKSA1, N-Channel MOSFET, 700 V Vdss, 12.5 A continuous drain, 360 mOhm Rds(on) at 10 V, 16.4 nC gate charge, PG-TO220-FP through-hole package, -40 to 150 °C junction temperature.

Infineon Technologies IPAN70R360P7SXKSA1
[IN STOCK] In Stock: 4 pcs
$4.44/ pc

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Technical specifications

IPAN70R360P7SXKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12.5A (Tc)
Power dissipation26.5W (Tc)
Operating temperature-40°C~150°C(TJ)
PackageTube
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 150µA
Rds on (Max) @ id, vgs360mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs16.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds517 pF @ 400 V

Technical details

IPAN70R360P7SXKSA1
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