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Infineon Technologies IPAN60R800CEXKSA1 — Discrete Semiconductors

Infineon IPAN60R800CEXKSA1 CoolMOS N-Ch MOSFET, 600V 8.4A

MPNIPAN60R800CEXKSA1
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Infineon CoolMOS™ IPAN60R800CEXKSA1, N-Channel MOSFET, 600 V Vdss, 8.4 A Id, 800 mOhm Rds(on) at 10 V, PG-TO220-FP through-hole package, -40°C to 150°C junction temperature.

$1.0400Ref. price · indicative, final on quote
Infineon Technologies IPAN60R800CEXKSA1 datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPAN60R800CEXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.4A (Tc)
Power dissipation27W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 170µA
Rds on (Max) @ id, vgs800mOhm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs17.2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds373 pF @ 100 V

Product details

With a typical gate charge of 17.2 nC at 10 V, this device switches fast with a modest gate driver — a key advantage when driving from a PWM controller with limited output current. The input capacitance measures 373 pF at 100 V drain-source, keeping the drive losses low in hard-switched topologies.

Thermal and mounting reality

The PG-TO220-FP (Full Pack) package isolates the backside tab electrically, so the device can be bolted directly to a grounded chassis or heatsink without a mica washer. In practice, continuous operation above 2 A to 3 A will need a heatsink sized to keep the junction within limits.

Infineon has scheduled the end of production; remaining stock is finite and being drawn down through distribution. For new designs, a current-production CoolMOS alternative should be qualified.

Frequently asked questions

What is a replacement for IPAN60R800CEXKSA1?

A current-production CoolMOS device with similar 600 V rating, 800 mOhm Rds(on) class, and TO-220 Full Pack package should be evaluated for new designs. Check the Infineon CoolMOS parametric search for the closest active alternative.

Does IPAN60R800CEXKSA1 require a heatsink?

At the maximum rated power dissipation of 27 W, a heatsink is required. For continuous operation near the 8.4 A rating, the junction temperature will exceed 150°C without a heatsink sized to the application's ambient temperature and airflow. The TO-220 Full Pack package bolts directly to a heatsink without an insulating pad.