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Infineon Technologies IPA95R1K2P7XKSA1 — Discrete Semiconductors

Infineon IPA95R1K2P7XKSA1 CoolMOS P7 N-Ch MOSFET, 950V, 6A

MPNIPA95R1K2P7XKSA1
Active

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 950 V drain-source, 6 A continuous drain current, 1.2 Ohm Rds(on) at 10 V gate drive, TO-220-3 Full Pack through-hole package, -55°C to 150°C junction temperature.

$1.5700Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA95R1K2P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation27W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 140µA
Rds on (Max) @ id, vgs1.2Ohm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds478 pF @ 400 V

Product details

The IPA95R1K2P7XKSA1 is a 950 V, 6 A N-channel MOSFET in a TO-220 Full Pack package.

Switching loss budget — gate charge and capacitance

Temperature range and mounting reality

The through-hole TO-220 Full Pack body (PG-TO220-FP) bolts directly to a chassis or heatsink without a separate insulator; the full-pack moulding provides the isolation. The 27 W dissipation ceiling at case temperature means the thermal path to the heatsink determines how much continuous current the part can actually carry.

Frequently asked questions

What is the Rds(on) of IPA95R1K2P7XKSA1?

Maximum on-resistance is 1.2 Ohm at a drain current of 2.7 A with 10 V gate drive. This is the value to use for worst-case conduction loss calculations.

Is IPA95R1K2P7XKSA1 obsolete or EOL?

It remains in the active CoolMOS P7 portfolio.

Is IPA95R1K2P7XKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.