900 V N-channel CoolMOS in a full-pack through-hole package
The 500 mOhm maximum on-resistance is specified at 10 V gate drive — the same voltage you would use for a standard 12 V gate-drive rail in an off-line flyback or PFC stage.
Gate charge and switching behaviour
Total gate charge is 68 nC at 10 V, with an input capacitance of 1700 pF at 100 V drain-source. For a 100 kHz hard-switched topology, the gate-driver must supply an average current of about 6.8 mA — well within the capability of a standard 1 A or 2 A driver, but the peak current during the Miller plateau determines the switching speed. The 3.5 V maximum gate threshold at 740 µA drain current means the device turns on cleanly with a 10 V drive, leaving margin against noise on the gate trace.
It is ROHS3 compliant.