800 V CoolMOS in a fully isolated TO-220
The TO-220 Full Pack package (TO-220-3F) is fully moulded with the backside tab isolated from the drain, so you can bolt it directly to a heatsink without a silicone pad or mica washer. That saves assembly time and improves thermal contact — useful if you are swapping parts in the field or building a prototype on a perfboard.
Gate charge and switching speed — what 45 nC buys you
Total gate charge is 45 nC at 10 V gate drive. For a hard-switched converter at 70 kHz, the gate driver needs to source and sink about 3.15 mA average — well within a standard totem-pole driver like the IR2110 or a bootstrap driver. The 1100 pF input capacitance at 100 V drain bias means the Miller plateau is manageable; the part does not need a super-low-impedance driver to stay efficient. If you are pushing toward 150 kHz or higher, the 45 nC Qg starts to eat into the efficiency budget — the switching losses scale with frequency. For a 100 W flyback running at 65 kHz, this part is right at home. For a 300 W LLC converter at 200 kHz, you would want a CoolMOS with lower gate charge, like the IPx60Rxxx series.
Thermal budget — 33 W in a TO-220FP
Maximum power dissipation is 33 W at the case temperature. The TO-220 Full Pack has a higher junction-to-case thermal resistance than a standard TO-220 because the plastic moulding adds a thermal barrier — expect RthJC around 3.8 °C/W typical. With a 150°C maximum junction temperature and 85°C ambient in a sealed enclosure, you have about 17 W of usable dissipation before you hit the limit. That matches the conduction plus switching losses of an 8 A, 800 V part in a typical 150–200 W PFC stage.