IPA80R450P7XKSA1

Infineon Technologies

Infineon CoolMOS™ P7 series, IPA80R450P7XKSA1, N-channel super-junction MOSFET, 800 V Vdss, 11 A Id, 450 mOhm Rds(on) at 10 V, 24 nC Qg, TO-220 Full Pack, -55 to 150 °C.

Infineon Technologies IPA80R450P7XKSA1
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[IN STOCK] In Stock: 25 pcs
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Technical specifications

IPA80R450P7XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
FET featureSuper Junction
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 220µA
Rds on (Max) @ id, vgs450mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds770 pF @ 500 V

Technical details

800 V super-junction MOSFET in TO-220 Full Pack

Rds(on) at 450 mOhm at 4.5 A and 10 V sets the conduction loss at 9.1 W at rated current — well within the 29 W maximum power dissipation at case temperature. The 770 pF input capacitance at 500 V drain-source confirms the switching losses will be modest in a hard-switched 400 V bus application.

The TO-220 Full Pack (PG-TO220-3-31) isolates the backside tab electrically, so the heatsink does not need an insulating pad — the mounting screw torque and thermal compound application follow the package drawing. The through-hole mounting suits point-to-point wiring or PCB layouts where the tab is soldered to a copper island for heatsinking.

IPA80R450P7XKSA1
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