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Infineon Technologies IPA80R360P7XKSA1 — Discrete Semiconductors

IPA80R360P7XKSA1 CoolMOS P7 N-Ch 800V 13A TO-220FP

MPNIPA80R360P7XKSA1
Active

Infineon CoolMOS™ P7 N-Channel MOSFET, 800 V drain-source, 13 A continuous drain, 360 mOhm Rds(on), TO-220 Full Pack (PG-TO220-FP), Through Hole, Tube.

$3.1100Ref. price · indicative, final on quote
Infineon Technologies IPA80R360P7XKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA80R360P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 280µA
Rds on (Max) @ id, vgs360mOhm @ 5.6A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds930 pF @ 500 V

Product details

Switching and drive parametrics

The IPA80R360P7XKSA1: The input capacitance measures 930 pF at 500 V drain bias, which feeds into the driver's peak current sizing for the target rise time. The maximum gate-source voltage is ±20 V, and the threshold voltage is 3.5 V maximum at 280 µA drain current, giving a clean turn-on margin with standard 10 V gate drives.

Thermal and operating envelope

Junction temperature range spans -55°C to 150°C, covering industrial and automotive under-hood ambient conditions. Maximum power dissipation is 30 W at the case temperature, defining the heatsink requirement for continuous operation.

Frequently asked questions

What compliance documentation is available for IPA80R360P7XKSA1?

The device is ROHS3 compliant. Standard Infineon compliance documentation (RoHS, REACH) is available for this part number.