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Infineon Technologies IPA80R1K4P7XKSA1 — Discrete Semiconductors

Infineon IPA80R1K4P7XKSA1 CoolMOS N-Ch MOSFET, 800V, 4A

MPNIPA80R1K4P7XKSA1
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Infineon CoolMOS™ IPA80R1K4P7XKSA1, N-Channel MOSFET, 800 V Vdss, 4 A Id, 1.4 Ohm Rds(on) @ 1.4 A, 10 V, TO-220-3 Full Pack, Through Hole, -55 to 150 °C.

$1.3600Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPA80R1K4P7XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation24W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 700µA
Rds on (Max) @ id, vgs1.4Ohm @ 1.4A, 10V
Gate charge (Qg) (Max) @ vgs10 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds250 pF @ 500 V

Product details

800 V N-channel in a full-pack through-hole package

The full-pack TO-220-3 (PG-TO220-3-31) isolates the tab electrically, so no insulating pad or washer is needed between the device and the heatsink — a time-saver on the assembly line and one less BOM line for thermal interface material.

Conduction loss and gate drive budget

That 10 V drive level is the recommended operating point for minimum Rds(on); the gate is rated to ±20 V absolute maximum, giving headroom for a 12 V or 15 V gate driver without risk of oxide breakdown. Total gate charge is 10 nC at 10 V — a light enough load that a simple PWM output from a controller IC or a low-current gate driver can switch it at moderate frequencies without excessive drive losses.

Where the 800 V rating fits the bill

An 800 V Vdss rating with 4 A continuous current places this part squarely in offline flyback converters, auxiliary power supplies, and PFC stages where the DC bus sits at 380–400 V and the reflected voltage on the primary MOSFET can exceed 600 V. The 250 pF input capacitance at 500 V drain-source is low enough that the switching losses stay manageable in a quasi-resonant or hard-switched topology at 65–100 kHz. Operating junction temperature spans -55 to 150 °C, covering industrial and outdoor telecom enclosures where ambient heat pushes the junction.

Frequently asked questions

How do I get current pricing and availability for IPA80R1K4P7XKSA1?

Submit an RFQ with your target quantity and the current market price and lead time will be provided against your order.

What package does IPA80R1K4P7XKSA1 come in?

It is supplied in a TO-220-3 Full Pack (PG-TO220-3-31) through-hole package. The shipping medium is tube.