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Infineon Technologies IPA65R660CFDXKSA2 — Discrete Semiconductors

Infineon Technologies IPA65R660CFDXKSA2

MPNIPA65R660CFDXKSA2
Active
$1.3395Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA65R660CFDXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CFD2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage700 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation27.8W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 200µA
Rds on (Max) @ id, vgs660mOhm @ 2.1A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds615 pF @ 100 V