Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V, 11.4 A, 310 mOhm, 41 nC gate charge, TO-220-3 Full Pack, -55 to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11.4A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 400µA |
| Rds on (Max) @ id, vgs | 310mOhm @ 4.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 100 V |
The IPA65R310CFDXKSA2 is housed in a TO-220 Full Pack (PG-TO220-FP) package.
Total gate charge is 41 nC at Vgs = 10 V. Input capacitance is 1100 pF at Vds = 100 V.
Maximum power dissipation is 32 W at case temperature Tc. The full-pack construction puts the die close to the mounting face, so the thermal resistance to the heatsink is dominated by the interface grease thickness, not an additional insulator layer.
Yes, the IPA65R310CFDXKSA2 is ROHS3 compliant.