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Infineon Technologies IPA65R225C7 — Discrete Semiconductors

Infineon IPA65R225C7 CoolMOS N-Channel MOSFET, 650 V

MPNIPA65R225C7
Active

Infineon CoolMOS™ IPA65R225C7, N-Channel MOSFET, 650 V Vdss, 225 mOhm Rds(on) @ 4.8 A / 10 V, 7 A continuous drain, TO-220-3 Full Pack, -55°C to 150°C Tj.

$1.4500Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R225C7 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 240µA
Rds on (Max) @ id, vgs225mOhm @ 4.8A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds996 pF @ 400 V

Product details

At 225 mOhm max at 4.8 A and 10 V, this part sits in the middle of the on-resistance range.

Through-hole Full Pack — rework and assembly note

The TO-220 Full Pack is a through-hole package with three leads.

Frequently asked questions

What are the recommended alternatives for IPA65R225C7?

Within the CoolMOS C7 family, pin-compatible alternatives with different Rds(on) / current ratings exist — for example, the IPA65R380C7 (380 mOhm, lower current) or IPA65R125C7 (125 mOhm, higher current). These share the same TO-220 Full Pack footprint and gate drive requirements, so you can trade off conduction loss against cost without a board spin.