At 225 mOhm max at 4.8 A and 10 V, this part sits in the middle of the on-resistance range.
Through-hole Full Pack — rework and assembly note
The TO-220 Full Pack is a through-hole package with three leads.

Infineon CoolMOS™ IPA65R225C7, N-Channel MOSFET, 650 V Vdss, 225 mOhm Rds(on) @ 4.8 A / 10 V, 7 A continuous drain, TO-220-3 Full Pack, -55°C to 150°C Tj.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 29W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 240µA |
| Rds on (Max) @ id, vgs | 225mOhm @ 4.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 996 pF @ 400 V |
At 225 mOhm max at 4.8 A and 10 V, this part sits in the middle of the on-resistance range.
The TO-220 Full Pack is a through-hole package with three leads.
Within the CoolMOS C7 family, pin-compatible alternatives with different Rds(on) / current ratings exist — for example, the IPA65R380C7 (380 mOhm, lower current) or IPA65R125C7 (125 mOhm, higher current). These share the same TO-220 Full Pack footprint and gate drive requirements, so you can trade off conduction loss against cost without a board spin.