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Infineon Technologies IPA65R190CFDXKSA2 — Discrete Semiconductors

Infineon IPA65R190CFDXKSA2 MOSFET, 650V 17.5A TO-220

MPNIPA65R190CFDXKSA2
Active

Infineon CoolMOS™ CFD2 N-channel MOSFET, IPA65R190CFDXKSA2, 650 V Vdss, 17.5 A Id, 190 mOhm Rds(on), TO-220 Full Pack, through-hole, tube.

$3.5200Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ CFD2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R190CFDXKSA2 specifications
ParameterValue
SeriesCoolMOS™ CFD2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C17.5A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 700µA
Rds on (Max) @ id, vgs190mOhm @ 7.3A, 10V
Gate charge (Qg) (Max) @ vgs68 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1850 pF @ 100 V

Product details

650 V, 17.5 A — what these ratings mean for your switching stage

The IPA65R190CFDXKSA2: That means in a hard-switching PFC or flyback converter the switching losses will dominate the thermal budget, not the conduction loss.

Package and mounting — TO-220 Full Pack, no tab isolation needed

This simplifies assembly in a metal-enclosure PSU or motor drive where the heatsink is at chassis ground. The tube packaging is standard for through-hole power devices; no reel or tape handling.

Gate drive and switching — 68 nC Qg, 1850 pF input capacitance

The ±20 V max gate rating gives headroom for ringing on the gate node; a 10 V drive is the recommended level for minimum Rds(on).