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Infineon Technologies IPA65R190C7 — Discrete Semiconductors

Infineon IPA65R190C7 CoolMOS N-Ch 650V 8A TO-220FP

MPNIPA65R190C7
Active

Infineon Technologies CoolMOS™ series, N-Channel MOSFET, 650 V drain-source, 8 A continuous drain, 190 mOhm Rds(on), TO-220-3 Full Pack, Through Hole.

$1.6700Ref. price · indicative, final on quote
Infineon Technologies IPA65R190C7 datasheet (PDF)
PackagingTO-220-3 Full Pack
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA65R190C7 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation30W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 290µA
Rds on (Max) @ id, vgs190mOhm @ 5.7A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1150 pF @ 400 V

Product details

Gate charge and switching-loss budget

The IPA65R190C7: The threshold voltage (Vgs(th)) max is 4 V at 290 µA drain current — this is the turn-on edge; a gate drive that pulls below 4 V risks the MOSFET operating in the linear region during switching, increasing dissipation.

TO-220 Full Pack mounting and thermal budget

Housed in a PG-TO220 Full Pack (TO-220-3) with through-hole mounting — the full-pack variant has a fully insulated backside, so no thermal pad or insulating washer is needed against the heatsink; the tab is electrically isolated, simplifying heatsink attachment and reducing system assembly cost. Maximum power dissipation is 30 W at case temperature (Tc), and the operating junction temperature range spans -55°C to 150°C — the 30 W ceiling assumes an ideal heatsink; real-world dissipation is derated by the thermal resistance of the interface and the ambient conditions.

Frequently asked questions

What is the Rds(on) at the rated current and temperature?

The maximum Rds(on) is 190 mOhm at Id=5.7 A and Vgs=10 V. At the full 8 A continuous drain current and elevated junction temperature (e.g., 125°C), the on-resistance will be significantly higher — expect roughly 1.6× to 1.8× the 25°C value, so budget for 300–340 mOhm in a hot design.