Infineon CoolMOS™ C7, N-Channel MOSFET, 650 V, 10 A, 125 mOhm @ 8.9 A, 10 V, 35 nC @ 10 V, TO-220-3 Full Pack, Through Hole, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 440µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 8.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1670 pF @ 400 V |
The input capacitance is 1670 pF at 400 V drain bias.
The PG-TO220-FP package dissipates a maximum of 32 W at case temperature. The full-pack plastic body adds thermal resistance compared to a standard TO-220.
Yes — the 650 V drain-source rating and 10 A continuous current make it a natural fit for 400 V bus DC-DC converters, power factor correction stages, and flyback topologies. The 125 mOhm Rds(on) and 35 nC gate charge support hard-switching up to the 100 kHz range in a TO-220 Full Pack package.