Infineon CoolMOS™ IPA65R125C7, N-Channel MOSFET, 650 V Vdss, 125 mOhm Rds(on) at 10 V, 10 A Id, 35 nC Qg, TO-220 Full Pack, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 440µA |
| Rds on (Max) @ id, vgs | 125mOhm @ 8.9A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1670 pF @ 400 V |
Derate the continuous drain current above 25 °C per the datasheet's normalised curve; at 100 °C case temperature the usable Id drops to roughly 7 A.
The gate threshold voltage maximum is 4 V at 440 µA drain current, and the recommended drive voltage for the rated Rds(on) is 10 V. The 1670 pF input capacitance at 400 V drain-source is the capacitive load the driver sees at turn-on.
The maximum Rds(on) is 125 mOhm at a drain current of 8.9 A and a gate-source voltage of 10 V. This is the conduction loss figure to use for thermal and efficiency calculations at the rated operating point.