Infineon CoolMOS™ C7 series, N-Channel MOSFET, 650 V drain-source, 12 A continuous drain, 95 mOhm Rds(on) at 10 V, TO-220 Full Pack, -55 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 590µA |
| Rds on (Max) @ id, vgs | 95mOhm @ 11.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 45 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2140 pF @ 400 V |
The IPA65R095C7XKSA1: Total gate charge is 45 nC at 10 V.
The TO-220 Full Pack (PG-TO220-FP) has a fully isolated metal tab. This saves the cost and assembly step of a silicone pad or mica washer when mounting to a grounded heatsink.
The 150 °C maximum junction allows higher current density in a compact heatsink design, provided the thermal path is kept low-inductance.
Yes, it is listed as ROHS3 compliant.