With a maximum gate charge of 17.2 nC at 10 V and input capacitance of 373 pF at 100 V drain-source, this MOSFET is light on the gate-drive requirements. A standard 1 A gate-driver IC will switch it cleanly in the tens-of-kHz range; the low Qg also keeps gate-drive losses minimal in high-frequency resonant topologies. The ±20 V maximum gate rating gives margin for ringing on the gate node, but a 10 V drive is the target for the rated Rds(on).
TO-220 Full Pack — no insulating pad needed
The PG-TO220-FP (TO-220-3 Full Pack) package is fully isolated — the backside tab is not electrically connected to the drain.