Infineon CoolMOS™ series, IPA60R600CPXKSA1, N-Channel MOSFET, 600 V Vdss, 600 mOhm Rds(on) @ 3.3 A, 10 V, 6.1 A continuous drain current, TO-220-3 Full Pack package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6.1A (Tc) |
| Power dissipation | 28W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 220µA |
| Rds on (Max) @ id, vgs | 600mOhm @ 3.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 27 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 550 pF @ 100 V |
The IPA60R600CPXKSA1: Continuous drain current is specified at 6.1 A at 25°C case temperature, and the maximum power dissipation is 28 W at the case.
For new designs, Infineon's current CoolMOS™ CP or P7 series offers pin-compatible alternatives in the same TO-220 Full Pack footprint — check the parametric search for a 600 V, 600 mOhm class device with a similar gate charge profile.
For new designs, Infineon's current CoolMOS™ CP or P7 series in the same TO-220 Full Pack footprint is the starting point for a pin-compatible replacement at the 600 V, 600 mOhm class.