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Infineon Technologies IPA60R520E6XKSA1 — Discrete Semiconductors

Infineon IPA60R520E6XKSA1 CoolMOS N-Ch 600V 8.1A TO-220FP

MPNIPA60R520E6XKSA1
Obsolete

Infineon CoolMOS™ IPA60R520E6XKSA1, N-Channel MOSFET, 600 V Vds, 8.1 A Id, 520 mOhm Rds(on) @ 10 V, TO-220-3 Full Pack (PG-TO220-FP), -55°C to 150°C.

$1.7400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA60R520E6XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8.1A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 230µA
Rds on (Max) @ id, vgs520mOhm @ 2.8A, 10V
Gate charge (Qg) (Max) @ vgs23.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds512 pF @ 100 V

Product details

600 V CoolMOS in the isolated TO-220FP — what you're looking at

The IPA60R520E6XKSA1: This is a through-hole, isolated-tab device — the full-pack moulding means the metal tab is electrically isolated, so you don't need a mica washer or silicone pad when bolting it to a heatsink.

Switching performance — what the gate charge and capacitance numbers tell you

Gate charge is 23.4 nC at 10 V; input capacitance is 512 pF at 100 V drain-source.

Infineon lists the IPA60R520E6XKSA1 as Obsolete. If you're repairing a board that originally used this part, the replacement path is a parametric match from the current CoolMOS series — look for a 600 V N-channel in TO-220FP with similar Rds(on) and Qg, then verify gate-drive voltage and pin compatibility.

Frequently asked questions

Is IPA60R520E6XKSA1 obsolete and what is a suitable replacement?

Yes, Infineon lists IPA60R520E6XKSA1 as Obsolete. For a replacement, look at current Infineon CoolMOS C7 or P7 series parts: a 600 V N-channel in the same TO-220 Full Pack package, with an Rds(on) near 520 mOhm and similar gate charge. Verify the gate-drive voltage (10 V) and pinout before committing the board.