Infineon CoolMOS™ C6 series, IPA60R520C6XKSA1, N-Channel MOSFET, 600 V Vdss, 8.1 A Id, 520 mOhm Rds(on) @ 2.8 A, 10 V, TO-220-3 Full Pack, Through Hole, -55°C to 150°C TJ.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8.1A (Tc) |
| Power dissipation | 29W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 230µA |
| Rds on (Max) @ id, vgs | 520mOhm @ 2.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 23.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 512 pF @ 100 V |
Buyers should evaluate remaining stock for last-time-buy coverage or plan a form-fit-function replacement evaluation.
Total gate charge is 23.4 nC at 10 V, and input capacitance measures 512 pF at 100 V drain-source.
The PG-TO220-FP supplier package is a fully molded through-hole device — the metal tab is encapsulated, so no external isolation is needed.
No official replacement is listed in the Infineon CoolMOS C6 portfolio. For new designs, consider evaluating a current-generation 600 V CoolMOS device with similar Rds(on) and package, such as the IPx60RxxxC6 or CFD7 series, but verify pin compatibility and gate-drive requirements as the TO-220 Full Pack footprint is standard across many Infineon parts.