Infineon CoolMOS™ IPA60R385CP, N-Channel MOSFET, 600 V Vdss, 9 A Id, 385 mOhm Rds(on) @ 5.2 A, 10 V, TO-220-3 Full Pack, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 31W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 340µA |
| Rds on (Max) @ id, vgs | 385mOhm @ 5.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 790 pF @ 100 V |
The 31 W package limit (Tc) leaves headroom for switching transients.
The TO-220 Full Pack (PG-TO220-3-31) has a fully isolated metal tab. That means no mica washer or silicone pad between the device and the heatsink — just thermal compound. The junction-to-case thermal path is direct, and the full-pack construction adds a small thermal resistance penalty versus a standard TO-220, but the assembly time saving on a production line is real.
The maximum Rds(on) is 385 mOhm at a drain current of 5.2 A with a 10 V gate drive.
The IPA60R385CP is listed as RoHS compliant. The TO-220 Full Pack package is lead-free compatible.