Skip to main content
Log in
Infineon Technologies IPA60R360P7XKSA1 — Discrete Semiconductors

Infineon IPA60R360P7XKSA1 CoolMOS P7 N-Ch 650 V 9 A MOSFET

MPNIPA60R360P7XKSA1
Active

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 650 V Vdss, 9 A continuous drain at 25°C, 360 mOhm Rds(on) at 10 V, 13 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction.

$1.7200Ref. price · indicative, final on quote
Infineon Technologies IPA60R360P7XKSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R360P7XKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation22W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 140µA
Rds on (Max) @ id, vgs360mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds555 pF @ 400 V

Product details

The IPA60R360P7XKSA1: The TO-220 Full Pack isolates the backside tab electrically, eliminating the need for an insulating pad or washer when mounting to a heatsink.

Rds(on) is 360 mOhm at 10 V and 2.7 A. Gate charge is 13 nC at 10 V.

Thermal and temperature grade — junction margin for real loads

At 9 A continuous, the conduction loss alone (I²R) is about 29 W at 25°C case — that exceeds the 22 W dissipation rating, so the practical continuous current in a real design will be lower, limited by the thermal budget.

Frequently asked questions

What is the Rds(on) of IPA60R360P7XKSA1?

The maximum on-resistance is 360 mOhm at 2.7 A drain current and 10 V gate drive.