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Infineon Technologies IPA60R360P7SXKSA1 — Discrete Semiconductors

Infineon IPA60R360P7SXKSA1 CoolMOS P7 MOSFET, 600V, 9A

MPNIPA60R360P7SXKSA1
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Infineon Technologies CoolMOS™ P7 N-channel MOSFET, 600 Vdss, 9 A continuous drain, 360 mOhm Rds(on), TO-220-3 Full Pack, tube.

$1.2100Ref. price · indicative, final on quote
Infineon Technologies IPA60R360P7SXKSA1 datasheet (PDF)
PackagingTO-220-3 Full Pack
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IPA60R360P7SXKSA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation22W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 140µA
Rds on (Max) @ id, vgs360mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs13 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds555 pF @ 400 V

Product details

600 V, 9 A CoolMOS P7 in a through-hole full-pack

The IPA60R360P7SXKSA1: The 360 mOhm maximum on-resistance at 2.7 A and 10 V gate drive places it in the low-to-mid Rds(on) range for a 600 V class device, suitable for resonant and hard-switching topologies in power supplies and lighting ballasts.

Input capacitance measures 555 pF at 400 V drain-source, giving a figure of merit (Qg × Rds(on)) of about 4.7 nC·Ω — competitive for a 600 V MOSFET in this current class.

Package and thermal budget

Housed in a TO-220 Full Pack (PG-TO220-FP), the fully isolated plastic package eliminates the need for an insulating washer between the device and the heatsink. Maximum power dissipation is 22 W at the case, and the junction temperature range spans -40 °C to 150 °C, covering industrial and some automotive under-hood environments.