Infineon CoolMOS™ P6 series, N-Channel MOSFET, Drain to Source Voltage: 600 V, Continuous Drain Current: 12 A, On-Resistance: 330 mOhm, Through Hole, PG-TO220-FP, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P6 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 370µA |
| Rds on (Max) @ id, vgs | 330mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 22 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1010 pF @ 100 V |
The IPA60R330P6XKSA1 is a 600 V N-Channel CoolMOS P6 MOSFET in a PG-TO220-FP through-hole package.
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The 600 V drain-source voltage provides headroom for line transients. Gate charge is 22 nC at 10 V.
The IPA60R330P6XKSA1 is obsolete and no longer available through Infineon's factory or authorized distribution. Submit an RFQ for a firm quote on this specific date.
Infineon has not published a single direct successor for this specific order code. The CoolMOS P6 series includes other 600 V N-channel MOSFETs in the PG-TO220-FP package with varying on-resistance values — for example, a lower Rds(on) part in the same package and voltage class may serve as a functional replacement, but the gate charge, switching speed, and thermal performance will differ. Cross-reference the switching frequency and conduction loss budget against the available P6 family options before committing a replacement to the BOM.