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Infineon Technologies IPA60R299CPXKSA1 — Discrete Semiconductors

Infineon IPA60R299CPXKSA1 CoolMOS N-Ch 600V 11A MOSFET, NRND

MPNIPA60R299CPXKSA1
NRND

Infineon CoolMOS™ IPA60R299CPXKSA1, N-Channel 600 V, 11 A, 299 mOhm Rds(on) at 10 V, 29 nC gate charge, TO-220-3 Full Pack, -55°C to 150°C junction temperature.

$1.7774Ref. price · indicative, final on quote
Infineon Technologies IPA60R299CPXKSA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA60R299CPXKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C11A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 440µA
Rds on (Max) @ id, vgs299mOhm @ 6.6A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1100 pF @ 100 V

Product details

The IPA60R299CPXKSA1: It is built on Infineon's CoolMOS technology, which optimises the on-resistance versus gate-charge trade-off for hard-switching topologies like PFC boost stages, flyback converters, and LLC half-bridges.

That means Infineon has flagged it for eventual phase-out; the last-time-buy window may already be closing.

The total gate charge is 29 nC at 10 V.

Thermal budget with the FullPAK

Maximum power dissipation is 33 W at case temperature Tc. The -55°C to 150°C operating range covers cold-crank and hot-soak conditions.

Frequently asked questions

Is IPA60R299CPXKSA1 obsolete or end-of-life?

It is not yet end-of-life, but Infineon has flagged it for eventual phase-out. Existing production should plan for a last-time-buy or a pin-compatible replacement.