Infineon CoolMOS™ P7 series, N-Channel MOSFET, 600 V drain-source, 12 A continuous drain, 280 mOhm Rds(on) at 10 V, PG-TO220-FP through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 24W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4V @ 190µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 3.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 18 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 761 pF @ 400 V |
The 280 mOhm Rds(on) at 10 V gate drive is specified at 3.8 A, which is about one-third of the rated 12 A continuous current.
The PG-TO220-FP package has a higher thermal resistance than a standard TO-220 because the plastic encapsulates the backside of the die — plan for a larger heatsink or forced airflow when running near the 12 A limit.
Yes. The drain-to-source voltage rating is 600 V, which makes it suitable for high-voltage offline power supplies, flyback converters, PFC stages, and similar topologies operating from rectified mains up to 400 VDC bus voltages.
The primary difference is on-resistance. The IPA60R280P7XKSA1 has a maximum Rds(on) of 280 mOhm at 10 V, while the IPA60R380P7 is a higher-resistance variant at 380 mOhm. Both are 600 V CoolMOS P7 devices in the same PG-TO220-FP package. The 280 mOhm part will have lower conduction losses for the same current, at a slightly higher cost.
Lead time is confirmed at quote time when you submit an RFQ. As an active-production part, typical lead times through independent distribution are generally manageable, but current factory backlog and market conditions affect the exact window.