IPA60R280P7SXKSA1

Infineon Technologies · CoolMOS™ P7 Series

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 600 V drain-source, 12 A continuous drain, 280 mOhm Rds(on) at 10 V, 18 nC gate charge, PG-TO220-FP through-hole package, -40°C to 150°C junction temperature.

Infineon Technologies IPA60R280P7SXKSA1
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Technical specifications

IPA60R280P7SXKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C12A (Tc)
Power dissipation24W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 190µA
Rds on (Max) @ id, vgs280mOhm @ 3.8A, 10V
Gate charge (Qg) (Max) @ vgs18 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds761 pF @ 400 V

Technical details

What the 280 mOhm Rds(on) and 18 nC Qg mean for your design

The IPA60R280P7SXKSA1: At 3.8 A drain current and 10 V gate drive the maximum Rds(on) is 280 mOhm. The 18 nC total gate charge at Vgs=10 V keeps gate-drive energy low. The 761 pF input capacitance at 400 V drain-source is moderate for clean switching edges.

TO-220 FullPAK — no insulating washer needed

The PG-TO220-FP (FullPAK) package provides full isolation between the metal tab and the heatsink. That eliminates the need for a silicone pad or mica washer and reduces assembly time. Maximum power dissipation is 24 W at case temperature.

Active production, ROHS3 compliant — no LTB risk

Infineon lists this part as Active (current production) with ROHS3 compliance.

IPA60R280P7SXKSA1
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