Infineon CoolMOS P6™ series, N-Channel MOSFET, 600 V drain-source, 280 mOhm Rds(on) at 10 V, 13.8 A continuous drain, TO-220-3 Full Pack, through-hole, -55 to 150 °C junction.
| Parameter | Value |
|---|---|
| Series | CoolMOS P6™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13.8A (Tc) |
| Power dissipation | 32W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 4.5V @ 430µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 5.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25.5 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1190 pF @ 100 V |
The IPA60R280P6: The TO-220 Full Pack package has an isolated backside, allowing direct heatsink mounting without an insulating pad.
Input capacitance is 1190 pF at 100 V drain-source. Gate threshold is 4.5 V at 430 µA; rated Rds(on) requires 10 V drive.
This is the value to use for worst-case conduction loss calculations in your power stage.