IPA60R280C6XKSA1

Infineon Technologies

Infineon CoolMOS™ IPA60R280C6XKSA1, N-Channel MOSFET, 600 V Vds, 280 mOhm Rds(on) @ 6.5 A, 10 V, 13.8 A Id, 43 nC Qg, TO-220-3 Full Pack, Through Hole, -55°C to 150°C.

Infineon Technologies IPA60R280C6XKSA1
[IN STOCK] In Stock: 48 pcs
$3.85/ pc

Volume pricing

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Technical specifications

IPA60R280C6XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C13.8A (Tc)
Power dissipation32W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 430µA
Rds on (Max) @ id, vgs280mOhm @ 6.5A, 10V
Gate charge (Qg) (Max) @ vgs43 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds950 pF @ 100 V

Technical details

600 V CoolMOS in a full-pack TO-220

The IPA60R280C6XKSA1: The full-pack (isolated tab) package eliminates the need for an insulating washer and mounting hardware, simplifying assembly in offline power supplies, PFC stages, and flyback converters where the heatsink is at chassis potential.

Gate charge and switching behaviour

For a 100 kHz PFC stage, the switching losses stay within the 32 W power-dissipation ceiling of the TO-220 Full Pack when the junction is kept under 150°C.

Last Buy — plan the final order

This part is in Last Buy status. Infineon has issued a final purchase window — once that window closes, the part will not be manufactured again.

The maximum gate-source voltage is ±20 V, giving margin against drive overshoot in noisy switching nodes.

IPA60R280C6XKSA1
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