Infineon CoolMOS™ series, IPA60R250CPXKSA1, N-Channel MOSFET, 650 V drain-source voltage, 250 mOhm Rds(on) at 10 V, 12 A continuous drain current, TO-220-3 Full Pack, -55°C to 150°C operating junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 33W (Tc) |
| Operating temperature | -55°C~150°C(TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 Full Pack |
| Vgs(th) (Max) @ id | 3.5V @ 440µA |
| Rds on (Max) @ id, vgs | 250mOhm @ 7.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1300 pF @ 100 V |
The 650 V Vdss provides headroom for offline converters.
The IPA60R250CPXKSA1 carries an Obsolete lifecycle status. Infineon no longer manufactures this specific order code.
Infineon does not list a single direct successor order code in the available records. The closest functional replacement would be a current CoolMOS™ series MOSFET (such as P7 or C7) with the same 650 V drain-source voltage, 250 mOhm Rds(on) class, and TO-220 Full Pack package. Verify pin compatibility and gate drive requirements before substituting.