IPA60R230P6XKSA1

Infineon Technologies · CoolMOS™ P6 Series

Infineon Technologies CoolMOS™ P6 N-Channel MOSFET, 600 V, 16.8 A, 230 mOhm, TO-220-3 Full Pack, Through Hole.

Infineon Technologies IPA60R230P6XKSA1
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Technical specifications

IPA60R230P6XKSA1 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™ P6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16.8A (Tc)
Power dissipation33W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4.5V @ 530µA
Rds on (Max) @ id, vgs230mOhm @ 6.4A, 10V
Gate charge (Qg) (Max) @ vgs31 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1450 pF @ 100 V

Technical details

IPA60R230P6XKSA1
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