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Infineon Technologies IPA60R190C6XKSA1 — Discrete Semiconductors

Infineon IPA60R190C6XKSA1 CoolMOS N-Ch 600V 20.2A TO-220FP

MPNIPA60R190C6XKSA1
NRND

Infineon CoolMOS™ series, IPA60R190C6XKSA1, N-Channel 600 V, 20.2 A (Tc), 190 mOhm @ 9.5 A, 10 V, TO-220-3 Full Pack (PG-TO220-FP), -55°C to 150°C TJ.

$4.0600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPA60R190C6XKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C20.2A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 630µA
Rds on (Max) @ id, vgs190mOhm @ 9.5A, 10V
Gate charge (Qg) (Max) @ vgs63 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1400 pF @ 100 V

Product details

600 V CoolMOS in a fully isolated TO-220 Full Pack

That Full Pack construction is a time-saver on the assembly line and a reliability advantage in high-vibration environments where a loose mica pad could shift.

That is not the same as obsolete — the IPA60R190C6XKSA1 is still available to order, but Infineon has flagged it as a design-end-of-life part. For a repair or a last-time-buy on an existing production run, it is a valid choice. For a new power-stage design, you want to evaluate Infineon's current CoolMOS C7 or P7 series parts in the same 600 V class and TO-220 Full Pack footprint.

Gate charge and input capacitance — sizing the driver

Temperature range and thermal design

Maximum power dissipation is 34 W at case temperature Tc.

Frequently asked questions

Can I use IPA60R190C6XKSA1 in a 600V application?

Yes, the drain-to-source voltage rating is 600 V, and the continuous drain current is 20.2 A at 25°C case temperature. It is designed for 600 V bus applications such as PFC stages, flyback converters, and other hard-switching topologies.