IPA60R180C7

Infineon Technologies

Infineon CoolMOS™ series, N-Channel MOSFET, 600 V Drain to Source Voltage, 9 A Continuous Drain Current, 180 mOhm Rds On @ 5.3 A, 10 V, Through Hole, TO-220-3 Full Pack, -55°C to 150°C Junction Temperature.

Infineon Technologies IPA60R180C7
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Technical specifications

IPA60R180C7 specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation29W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 260µA
Rds on (Max) @ id, vgs180mOhm @ 5.3A, 10V
Gate charge (Qg) (Max) @ vgs24 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1080 pF @ 400 V

Technical details

The IPA60R180C7: Housed in a TO-220 Full Pack through-hole package (PG-TO220-3-111).

What the 180 mOhm Rds(on) means for your BOM

At 9 A continuous drain current, the I²R loss reaches roughly 14.6 W — the 29 W package dissipation limit leaves about 14 W headroom for switching losses and ambient derating. The 1080 pF input capacitance at 400 V drain bias is a figure to check against the driver's ability to charge and discharge the gate without excessive delay.

The TO-220 Full Pack package (PG-TO220-3-111) is a through-hole, isolated-tab design.

The CoolMOS C7 family includes several Rds(on) and current variants in the same TO-220 Full Pack footprint, but the IPA60R180C7 is the 180 mOhm / 9 A option — a direct fit for designs that need that specific on-resistance and current rating.

IPA60R180C7
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