IPA60R165CP

Infineon Technologies · CoolMOS™ Series

Infineon CoolMOS™ IPA60R165CP, N-Channel MOSFET, 600V Vdss, 21A Id, 165mOhm Rds(on) @ 12A, 10V, 52nC Qg, TO-220 Full Pack, -55°C to 150°C.

Infineon Technologies IPA60R165CP
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[IN STOCK] In Stock: 4 pcs
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MOQ 1 · Bulk · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPA60R165CP specifications
Parameter / AttributeSpecification / Value
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation34W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id3.5V @ 790µA
Rds on (Max) @ id, vgs165mOhm @ 12A, 10V
Gate charge (Qg) (Max) @ vgs52 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2000 pF @ 100 V

Technical details

The 600 V Vdss gives a 1.5× derating margin for a typical 400 V DC bus in power-factor-correction stages, which is the standard practice for reliable operation under line transients. The 165 mOhm Rds(on) at 12 A sets the conduction loss at about 2.4 W at full current — within the 34 W power dissipation ceiling, but the TO-220 Full Pack's thermal resistance to case (RthJC) will be higher than a standard TO-220, so the heatsink must be sized accordingly.

The TO-220 Full Pack (PG-TO220 Full Pack) is a through-hole package with a fully moulded, electrically isolated backside tab. This means the tab can be bolted directly to a grounded heatsink without a thermal pad or mica insulator, reducing assembly steps and improving thermal transfer.

It is ROHS3 compliant.

IPA60R165CP
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